? semiconductor components industries, llc, 2005 september, 2005 ? rev. 6 1 publication order number: tip3055/d tip3055 (npn), tip2955 (pnp) complementary silicon power transistors designed for general?purpose switching and amplifier applications. features ? dc current gain ? h fe = 20 ? 70 @ i c = 4.0 adc ? collector?emitter saturation v oltage ? v ce(sat) = 1.1 vdc (max) @ i c = 4.0 adc ? excellent safe operating area ? pb?free packages are available* ??????????????????? ??????????????????? maximum ratings ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? collector ? emitter voltage ??? ??? ???? ???? ??? ??? ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? c derate above 25 c ??? ??? ???? ???? ??? ??? c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ??? ? ? ? ??? t j , t stg ???? ? ?? ? ???? ? 65 to + 150 ??? ? ? ? ??? c ??????????????????? ??????????????????? thermal characteristics ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? thermal resistance, junction?to?case ??? ??? jc ???? ???? ??? ??? c/w ???????????? ???????????? ??? ??? ja ???? ???? ??? ??? c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 15 ampere power transistors complementary silicon 60 volts, 90 watts see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information http://onsemi.com sot?93 (to?218) case 340d style 1 marking diagram a = assembly location y = year ww = work week tipxx55 = device code xx = 30 or 29 g = pb?free package aywwg tipxx55
tip3055 (npn), tip2955 (pnp) http://onsemi.com 2 ordering information device package shipping tip3055 sot?93 (to?218) 30 units / rail tip3055g sot?93 (to?218) (pb?free) 30 units / rail tip2955 sot?93 (to?218) 30 units / rail TIP2955G sot?93 (to?218) (pb?free) 30 units / rail ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ? ???????????????????? ? ?????????????????????? collector?emitter sustaining voltage (note 1) (i c = 30 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 60 ???? ? ?? ? ???? ? ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? ????? ????? ??? ??? ???? ???? ??? ??? ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 30 vdc, i b = 0) ????? ? ??? ? ????? i ceo ??? ? ? ? ??? ? ???? ? ?? ? ???? 0.7 ??? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 100 vdc, v be(off) = 1.5 vdc) ????? ? ??? ? ????? i cev ??? ? ? ? ??? ? ???? ? ?? ? ???? 5.0 ??? ? ? ? ??? madc ?????????????????????? ?????????????????????? ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (note 1) ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 4.0 adc, v ce = 4.0 vdc) (i c = 10 adc, v ce = 4.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 20 5.0 ???? ? ?? ? ? ?? ? ???? 70 ? ??? ? ? ? ? ? ? ??? ? ?????????????????????? ? ???????????????????? ? ?????????????????????? collector?emitter saturation voltage (i c = 4.0 adc, i b = 400 madc) (i c = 10 adc, i b = 3.3 adc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? ? ? ???? ? ?? ? ???? 1.1 3.0 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? base?emitter on voltage (i c = 4.0 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? ? ???? ? ?? ? ???? 1.8 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? second breakdown ?????????????????????? ?????????????????????? second breakdown collector current with base forward biased (v ce = 30 vdc, t = 1.0 s; nonrepetitive) ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? current gain ? bandwidth product (i c = 0.5 adc, v ce = 10 vdc, f = 1.0 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 2.5 ???? ? ?? ? ???? ? ??? ? ? ? ??? mhz ?????????????????????? ? ???????????????????? ? ?????????????????????? small?signal current gain (v ce = 4.0 vdc, i c = 1.0 adc, f = 1.0 khz) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 15 ???? ? ?? ? ???? ? ??? ? ? ? ??? khz 1. pulse test: pulse width = 300 s, duty cycle 2.0%. note: for additional design curves, refer to electrical characteristics curves of 2n3055.
tip3055 (npn), tip2955 (pnp) http://onsemi.com 3 tip3055 tip2955 figure 1. dc current gain i c , collector current (amp) 0.1 100 1000 10 1.0 2.0 0.3 7.0 10 v ce = 4.0 v t j = 25 c h fe , dc current gain 0.2 0.5 0.7 3.0 5.0 i c , collector current (amps) 10 5.0 0.1 0.3 2.0 3.0 figure 2. maximum rated forward bias safe operating area v ce , collector?emitter voltage (volts) 1.0 2.0 4.0 6.0 10 20 0.2 0.5 1.0 20 30 50 100 40 60 secondary breakdown limit bonding wire limit thermal limit @ t c = 25 c t j = 150 c 300 s 1.0ms 10ms dc there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 2 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature.
tip3055 (npn), tip2955 (pnp) http://onsemi.com 4 package dimensions sot?93 (to?218) case 340d?02 issue e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. a d v g k s l u b q e c j h dim min max min max inches millimeters a ??? 20.35 ??? 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l ??? 16.20 ??? 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069 123 4 style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 tip3055/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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